PMBS3906 features low current (max. 100 ma) low voltage (max. 40 v). applications general purpose switching and amplification, e.g. telephony and professional communication equipment. description pnp transistor in a sot23 plastic package. npn complement: pmbs3904. marking type number marking code (1) PMBS3906 * o6 pinning pin description 1 base 2 emitter 3 collector fig.1 simplified outline (sot23) and symbol. handbook, halfpage 2 1 3 mam256 top view 2 3 1 limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 40 v v ceo collector-emitter voltage open base -- 40 v v ebo emitter-base voltage open collector -- 5v i c collector current (dc) -- 100 ma i cm peak collector current -- 200 ma i bm peak base current -- 200 ma p tot total power dissipation t amb 25 c - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. characteristics t amb = 25 c unless otherwise speci?ed. note 1. pulse test: t p 300 m s; d 0.02. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 500 k/w symbol parameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb = - 30 v -- 50 na i ebo emitter cut-off current i c = 0; v eb = - 5v -- 50 na h fe dc current gain v ce = - 1 v; (see fig.2) i c = - 0.1 ma 60 - i c = - 1ma 80 - i c = - 10 ma 100 300 i c = - 50 ma; note 1 60 - i c = - 100 ma; note 1 30 - v cesat collector-emitter saturation voltage i c = - 10 ma; i b = - 1ma -- 250 mv i c = - 50 ma; i b = - 5 ma; note 1 -- 400 mv v besat base-emitter saturation voltage i c = - 10 ma; i b = - 1ma -- 850 mv i c = - 50 ma; i b = - 5 ma; note 1 -- 950 mv c c collector capacitance i e =i e = 0; v cb = - 5 v; f = 100 mhz - 4.5 pf c e emitter capacitance i c =i c = 0; v eb = - 0.5 v; f = 100 mhz - 12 pf f t transition frequency i c = - 10 ma; v ce = - 20 v; f = 100 mhz 150 - mhz f noise ?gure i c = - 100 m a; v ce = - 5 v; r s =1k w ; f = 10 hz to 15.7 khz; - 4db switching times (between 10% and 90% levels); (see fig.3) t on turn-on time i con = - 10 ma; i bon = - 1 ma; i boff =1ma - 100 ns t d delay time - 50 ns t r rise time - 50 ns t off turn-off time - 700 ns t s storage time - 600 ns t f fall time - 100 ns PMBS3906 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
